Infineon IRFH5215TRPBF
$ 0.913
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: -12.16%
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Supply Chain
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-12-21
Lifecycle StatusObsolete (Last Updated: 2 months ago)
LTB Date2023-05-15
LTD Date2023-11-15
Parti correlate
InfineonIRFH5015TRPBF
Single N-Channel 150 V 31 mOhm 54 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
InfineonIRFH5020TRPBF
Single N-Channel 200 V 55 mOhm 36 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
InfineonIRFH5015TR2PBF
MOSFET N-CH 150V 10A 8VQFN / N-Channel 150 V 10A (Ta), 56A (Tc) Surface Mount 8-PQFN (5x6)
InfineonIRFH5302DTRPBF
Single N-Channel 30 V 2.5 mOhm 26 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
Descrizioni
Descrizioni di Infineon IRFH5215TRPBF fornite dai suoi distributori.
Single N-Channel 150 V 58 mOhm 21 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
150V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6mm package, PG-TDSON-8, RoHS
Infineon SCT
Trans MOSFET N-CH 150V 5A 8-Pin PQFN T/R
HEXFET POWER MOSFET Power Field-Effect Transistor, 5A I(D), 150V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N CH MOSFET, 150V, 5A, 8-PQFN; Transisto; N CH MOSFET, 150V, 5A, 8-PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:150V; On Resistance Rds(on):45.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; No. of Pins:8
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -12.16%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageVQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)5 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance58 mΩ
Drain to Source Voltage (Vdss)150 V
Fall Time2.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.35 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance58 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation3.6 W
Rds On Max58 mΩ
Rise Time6.3 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time11 ns
Turn-On Delay Time6.7 ns
Dimensions
Height950 µm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità