Infineon IRFB7746PBF
$ 0.571
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-01-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-09-30
LTD Date2023-03-31
Parti correlate
InfineonIPP45N06S409AKSA2
60V, N-Ch, 9.1 mΩ max, Automotive MOSFET, TO-220, OptiMOS™-T2, PG-TO220-3, RoHS
NXP SemiconductorsPSMN7R6-60XSQ
N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A)
STMicroelectronicsSTP55NF06FP
N-channel 60 V, 0.015 Ohm, 50 A STripFET(TM) II Power MOSFET in TO-220FP package
Descrizioni
Descrizioni di Infineon IRFB7746PBF fornite dai suoi distributori.
Single N-Channel 75 V 10.6 mOhm 55 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 75V 59A 3-Pin(3+Tab) TO-220AB Tube
MOSFET Operating temperature: -55...+175 °C Housing type: TO-220AB Polarity: N Power dissipation: 99 W
HEXFET POWER MOSFET Power Field-Effect Transistor, 59A I(D), 75V, 0.0106ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 75V, 59A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 59A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0106ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V;
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)59 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance10.6 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.049 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation99 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance10.6 mΩ
Package Quantity1000
Power Dissipation99 W
Rds On Max10.6 mΩ
Rise Time36 ns
Schedule B8541290080
Turn-Off Delay Time33 ns
Turn-On Delay Time9.9 ns
Dimensions
Height20.57 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità