Infineon IRFB7430PBF
$ 1.38
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Descrizioni
Descrizioni di Infineon IRFB7430PBF fornite dai suoi distributori.
40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
Infineon SCT
Single N-Channel 40 V 1.3 mOhm 460 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 40V 409A 3-Pin(3+Tab) TO-220AB Tube
MOSFET Operating temperature: -55...175 °C Drive: logic level Housing type: TO-220AB Polarity: N Power dissipation: 375 W
HEXFET POWER MOSFET Power Field-Effect Transistor, 195A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 40V, 195A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.001ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:375W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +1.23%
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Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.3 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time100 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance14.24 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance1.3 mΩ
Package Quantity1000
Power Dissipation375 W
Rds On Max1.3 mΩ
Recovery Time52 ns
Rise Time105 ns
Schedule B8541290080
Threshold Voltage2.2 V
Turn-Off Delay Time160 ns
Turn-On Delay Time32 ns
Dimensions
Height20.56 mm
Length10.67 mm
Width4.83 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità