Infineon IRFB4510PBF
$ 0.841
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Schede tecniche e documenti
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2021-04-28
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
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MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.34 Milliohms;ID 80A;TO-220AB;PD 140W;-55de
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MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 12Milliohms;ID 80A;TO-220AB;PD 260W;-55deg
InfineonIRFB4610PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 11Milliohms;ID 73A;TO-220AB;PD 190W;-55deg
NXP SemiconductorsBUK7528-100A,127
Trans MOSFET N-CH 100V 47A Automotive 3-Pin(3+Tab) TO-220AB Rail
Descrizioni
Descrizioni di Infineon IRFB4510PBF fornite dai suoi distributori.
Single N-Channel 100 V 13.5 mOhm 58 nC HEXFET® Power Mosfet - TO-220-3
High Efficiency Synchronous Rectification in SMPS | MOSFET N CH 100V 62A TO220AB
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 62A 3-Pin(3+Tab) TO-220AB Tube
Transistor MOSFET N-ch 100V 44A TO-220AB
Infineon NChannelMOSTube, Vds=100 V, 62 A, TO-220ABencapsulation, Through hole mounting
HEXFET Power MOSFET Power Field-Effect Transistor, 62A I(D), 100V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET N CH 100V, 62A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0107ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 62 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 10.7 / Gate-Source Voltage V = 20 / Fall Time ns = 28 / Rise Time ns = 32 / Turn-OFF Delay Time ns = 28 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 140
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -33.19%
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Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)62 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance13.5 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.18 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance13.5 mΩ
Package Quantity1000
Power Dissipation140 W
Rds On Max13.5 mΩ
Rise Time32 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time28 ns
Turn-On Delay Time13 ns
Dimensions
Height20.56 mm
Length10.67 mm
Width4.83 mm
Schede tecniche e documenti
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Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Dichiarazioni di conformità