Infineon IRFB3607PBF
$ 0.495
EOL
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Cronologia dell'inventario
Tendenza a 3 mesi: +8.77%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-02-14
Lifecycle StatusEOL (Last Updated: 4 months ago)
LTB Date2026-05-31
LTD Date2026-11-30
Parti correlate
InfineonIRF1010EZPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 6.8Milliohms;ID 84A;TO-220AB;PD 140W;-55deg
InfineonIRF3205ZPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 4.9Milliohms;ID 110A;TO-220AB;PD 170W;-55de
InfineonIRF1018EPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.1Milliohms;ID 79A;TO-220AB;PD 110W;-55deg
Descrizioni
Descrizioni di Infineon IRFB3607PBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.34 Milliohms;ID 80A;TO-220AB;PD 140W;-55de
Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - TO-220-3
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 75 V, 80 A, 0.00734 ohm, TO-220AB, Through Hole
Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 140 W
Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.34mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220AB; Power Dissipation Pd:140W; Pulse Current Idm:310A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +8.77%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)75 V
Dual Supply Voltage75 V
Element ConfigurationSingle
Fall Time96 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.07 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance9 mΩ
Package Quantity1000
Power Dissipation140 W
Rds On Max9 mΩ
Recovery Time50 ns
Resistance9 MΩ
Rise Time110 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time43 ns
Turn-On Delay Time16 ns
Dimensions
Height19.8 mm
Length10.6426 mm
Width4.82 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità