Infineon IRFB4115GPBF
$ 7.08
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
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Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 7.08
$ 1.04
Stock
63,168
1,012,588
Authorized Distributors
1
6
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
150 V
150 V
Continuous Drain Current (ID)
104 A
104 A
Threshold Voltage
-
5 V
Rds On Max
11 mΩ
11 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
380 W
380 W
Input Capacitance
5.27 nF
5.27 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-01-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2019-11-15
LTD Date2020-05-15
Parti correlate
InfineonIRFB4228PBF
150V Single N-Channel PDP Switch HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Descrizioni
Descrizioni di Infineon IRFB4115GPBF fornite dai suoi distributori.
150V Single N-Channel HEXFET Power MOSFET in a Lead Free Halogen Free TO-220AB package
Trans MOSFET N-CH Si 150V 104A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 150V 104A TO220AB
Single N-Channel 150 V 11 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
MOSFET, 150V, 104A, 11 MOHM, 77 NC QG, TO220AB, HALOGEN-FREE
Power Field-Effect Transistor, 104A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N CH MOSFET, 150V, 104A, TO-220AB; Trans; N CH MOSFET, 150V, 104A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:104A; Drain Source Voltage Vds:150V; On Resistance Rds(on):9.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; MSL:-
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)104 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance11 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time39 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.27 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation380 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
On-State Resistance11 mΩ
Package Quantity1000
Power Dissipation380 W
Rds On Max11 mΩ
Resistance11 MΩ
Rise Time73 ns
Turn-Off Delay Time41 ns
Turn-On Delay Time18 ns
Dimensions
Height20.57 mm
Length10.668 mm
Width4.826 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità