Infineon IRFB4110PBF
$ 1.26
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Cronologia dell'inventario
Tendenza a 3 mesi: +115%
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Questo componente
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Price @ 1000
$ 1.26
$ 1.61
Stock
1,072,225
224,199
Authorized Distributors
6
3
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vds)
100 V
100 V
Continuous Drain Current (ID)
120 A
120 A
Threshold Voltage
4 V
4 V
Rds On Max
4.5 mΩ
4.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
370 W
370 W
Input Capacitance
9.62 nF
9.62 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-04-26
Lifecycle StatusProduction (Last Updated: 5 months ago)
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Descrizioni
Descrizioni di Infineon IRFB4110PBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 3.7 Milliohms;ID 180A;TO-220AB;PD 370W
MOSFET N-CH 100V 120A TO220AB N-Channel 100 V 120A (Tc) 370W (Tc) Through Hole TO-220AB
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Single N-Channel 100 V 4.5 mOhm 210 nC HEXFET® Power Mosfet - TO-220-3
Transistor MOSFET N-Ch. 180A/100V TO220 IRFB 4110 PBF
Power MOSFET, N Channel, 100 V, 180 A, 0.0045 ohm, TO-220AB, Through Hole
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220AB
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 370 W
Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 100V, 180A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRFB4110PBF.
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +115%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Current Rating180 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance4.5 mΩ
Drain to Source Voltage (Vds)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time88 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.62 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation370 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance4.5 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation370 W
Rds On Max4.5 mΩ
Recovery Time75 ns
Rise Time67 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time78 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)100 V
Dimensions
Height16.51 mm
Length10.66 mm
Width4.826 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Dichiarazioni di conformità