Infineon IRFB4110PBF

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 3.7 Milliohms; ID 180A; TO-220AB; PD 370W
$ 1.1
Production
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
Future Electronics
2
IRFB4110PBF1450Tube
Arrow ElectronicsIRFB4110PBF16251
RutronikTMOSP12115220050
19h
NewarkIRFB4110PBF01
Rochester ElectronicsIRFB4110PBF0
12h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRFB4110PBF.

Newark

Datasheet8 pagine14 anni fa
Datasheet0 pagine0 anni fa
Datasheet8 pagine18 anni fa

IHS

iiiC

SOS electronic

RS (Formerly Allied Electronics)

Cronologia dell'inventario

Trend di 3 mesi:
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Parti alternative

Questo componente
Parti alternative
InfineonIRFB4110PBF
InfineonIRFB4110GPBF
Price @ 1000
$ 1.1
$ 2.07
Stock
1,156,978
138,325
Authorized Distributors
6
4
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
120 A
120 A
Threshold Voltage
4 V
4 V
Rds On Max
4.5 mΩ
4.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
370 W
370 W
Input Capacitance
9.62 nF
9.62 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-04-26
Lifecycle StatusProduction (Last Updated: 3 weeks ago)

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Descrizioni

Descrizioni di Infineon IRFB4110PBF fornite dai suoi distributori.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 3.7 Milliohms;ID 180A;TO-220AB;PD 370W
RS (Formerly Allied Electronics)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Single N-Channel 100 V 4.5 mOhm 210 nC HEXFET® Power Mosfet - TO-220-3
Future Electronics
Power MOSFET, N Channel, 100 V, 180 A, 0.0045 ohm, TO-220AB, Through Hole
Avnet
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220AB
Verical
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 370 W
Distrelec
Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Semicontronic
N Channel Mosfet, 100V, 180A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRFB4110PBF.
Newark
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Infineon

Immagini

Infineon
Augswan
element14 APAC
TME
DKO Electronshik
Farnell
RS
iiiC
RS (Formerly Allied Electronics)
South Microelectronics
Distrelec
International Rectifier
Jameco
LCSC

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFB 4110 PBF
  • IRFB 4110PBF
  • IRFB-4110PBF
  • IRFB4110
  • IRFB4110 PBF
  • IRFB4110PBF.
  • SP001570598