Infineon IRF8302MTRPBF
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Cronologia dell'inventario
Tendenza a 3 mesi: -100%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-05-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2023-05-15
LTD Date2023-11-15
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NTMFS4898N: Power MOSFET 30V 117A 3 mOhm Single N-Channel with Integrated Schottky SO-8FL
Descrizioni
Descrizioni di Infineon IRF8302MTRPBF fornite dai suoi distributori.
Trans MOSFET N-CH 30V 31A 7-Pin Direct-FET MX T/R
A 30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 31 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
2.8W(Ta)，104W(Tc) 20V 2.35V@ 150µA 53nC@ 4.5 V 1individualNChannel 30V 1.8mΩ@ 31A,10V 31A，190A 6.03nF@15V WDSON-5 direct mounting，SMD mount 4.9mm*3.9mm*1.75mm
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -100%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins7
Number of Terminals3
Technical
Continuous Drain Current (ID)31 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance1.8 mΩ
Drain to Source Voltage (Vds)30 V
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.03 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation104 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance1.8 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max1.8 mΩ
Rise Time37 ns
Schedule B8541290080
Threshold Voltage1.35 V
Turn-Off Delay Time20 ns
Turn-On Delay Time22 ns
Dimensions
Height700 µm
Conformità
Classificazione ambientale
China RoHSCompliant
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Dichiarazioni di conformità