Infineon IRF7855PBF
$ 0.52
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRF7855PBF | 11 | 22h | |||||||||
| RS (Formerly Allied Electronics) | IRF7855PBF | 0 | 3800 | Bulk | 15h | |||||||
| Farnell | IRF7855PBF | 0 | 1 | 22h | ||||||||
| Win Source | WS-777033 | 10.270 | 80 | 23h | ||||||||
| Worldway Electronics | IRF7855PBF | 6337 | 7 | Tube | 22h |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF7855PBF.
Modelli CAD
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| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 SnapEDA | Impronta | 3D | Scarica |
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Questo componente
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Price @ 1000
$ 0.52
$ 0.641
Stock
86,275
697,713
Authorized Distributors
3
6
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SO
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
12 A
12 A
Threshold Voltage
4.9 V
-
Rds On Max
9.4 mΩ
9.4 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
1.56 nF
1.56 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-01-05
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
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DMT6010LSS Series 60 V 14 A N-Channel Enhancement Mode Mosfet - SOIC-8
Diodes Inc.DMT6016LSS-13
DMT6016 Series 60 V 9.2 A 18 mOhm N-Channel Enhancement Mode Mosfet - SOIC-8
Descrizioni
Descrizioni di Infineon IRF7855PBF fornite dai suoi distributori.
IRF7855PBF N-channel MOSFET Transistor,12 A, 60 V, 8-Pin SOIC
Single N-Channel 60 V 9.4 mOhm 26 nC HEXFET® Power Mosfet - SOIC-8
MOSFET N-CH 60V 12A 8-SOIC / Trans MOSFET N-CH 60V 12A 8-Pin SOIC N Tube
60V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package, SO8, RoHS
Infineon SCT
Small Signal Field-Effect Transistor, 12A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N, 60V, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):9.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.9V; Power Dissipation Pd:97mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Base Number:7855; Current Id Max:12A; Output Current Max:2.5A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:97mW; Pulse Current Idm:97A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance9.4 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.56 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance9.4 mΩ
Package Quantity3800
PackagingCut Tape
Power Dissipation2.5 W
Rds On Max9.4 mΩ
Recovery Time50 ns
Resistance9.4 MΩ
Rise Time13 ns
Schedule B8541290080
Threshold Voltage4.9 V
Turn-Off Delay Time16 ns
Turn-On Delay Time8.7 ns
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF7855PBF.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità