Infineon IRF7807VPBF
Obsolete
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-03-09
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
Parti correlate
Diodes Inc.DMN3024LSD-13
Mosfet, Dual, N-Ch, 30V, 6.8A Rohs Compliant: Yes |Diodes Inc. DMN3024LSD-13
Diodes Inc.DMN3024LSS-13
1.6W(Ta) 20V 3V@ 250¦ÌA 12.9nC@ 10 V 1N 30V 24m¦¸@ 7A,10V 6.4A 608pF@15V SOIC-8
Descrizioni
Descrizioni di Infineon IRF7807VPBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 17 Milliohms;ID 8.3A;SO-8;PD 2.5W;VGS +/-20V
Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:8.3A; On Resistance, Rds(on):25mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SO-8 ;RoHS Compliant: Yes
MOSFET, N, LOGIC, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:8.3A; Resistance, Rds On:0.017ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:3V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:66A; Depth, External:5.2mm; Length / Height, External:1.75mm; Marking, SMD:IRF7807VPBF; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Pitch, Row:6.3mm; Power Dissipation:2.5W; Power, Pd:2.5W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:30V; Width, External:4.05mm
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)8.3 A
Current Rating8.3 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance25 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Fall Time2.2 ns
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
On-State Resistance25 mΩ
Package Quantity95
PackagingBulk
Power Dissipation2.5 W
Rds On Max25 mΩ
Rise Time1.2 ns
TerminationSMD/SMT
Turn-Off Delay Time11 ns
Turn-On Delay Time6.3 ns
Voltage Rating (DC)30 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Row Spacing6.3 mm
Width3.9878 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità