Infineon IRF7530TRPBF

Dual N-Channel 20 V 0.03 Ohm 26 nC HEXFET® Power Mosfet - MICRO-8
$ 0.75
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRF7530TRPBF.

Newark

Datasheet8 pagine21 anni fa

IHS

iiiC

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Parti alternative

Questo componente
Parti alternative
Price @ 1000
$ 0.75
$ 0.48
Stock
449,384
107,068
Authorized Distributors
2
1
Mount
Surface Mount
Surface Mount
Case/Package
MSOP
-
Drain to Source Voltage (Vdss)
20 V
20 V
Continuous Drain Current (ID)
5.4 A
5.4 A
Threshold Voltage
1.2 V
-
Rds On Max
30 mΩ
30 mΩ
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
1.3 W
1.3 W
Input Capacitance
1.31 nF
1.31 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-09-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-03-13
LTD Date2008-09-13

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Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.5A, 30mΩ
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Dual N-Channel 20 V 0.029 Ohm 18 nC HEXFET® Power Mosfet - SOIC-8
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MOSFET, Power;Dual N-Ch;VDSS 20V;RDS(ON) 0.023Ohm;ID 6.6A;SO-8;PD 2W;VGS +/-12V

Descrizioni

Descrizioni di Infineon IRF7530TRPBF fornite dai suoi distributori.

Dual N-Channel 20 V 0.03 Ohm 26 nC HEXFET® Power Mosfet - MICRO-8
Transistor MOSFET Array Dual N-CH 20V 5.4A 8-Pin Micro8 T/R
Avnet Japan
20V Dual N-Channel HEXFET Power MOSFET in a Micro 8 package, MICRO8, RoHS
Infineon SCT
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Continuous Drain Current, Id:5.4A; Package/Case:8-uSOIC; Power Dissipation, Pd:1.3W; Drain Source On Resistance @ 2.7V:45mohm ;RoHS Compliant: Yes
MOSFET, DUAL N-CH , 20V, 5.4A, USOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 5.4A; Drain Source Voltage Vds: 20V; On Resistance Rds(on; Available until stocks are exhausted Alternative available
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 5.4 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 30 / Gate-Source Voltage V = 12 / Fall Time ns = 16 / Rise Time ns = 11 / Turn-OFF Delay Time ns = 36 / Turn-ON Delay Time ns = 8.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = Micro8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.3

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRF7530
  • IRF7530TRPBF.
  • SP001572074