Infineon IRF7451PBF

INFINEON IRF7451PBF MOSFET Transistor, N Channel, 3.6 A, 150 V, 90 mohm, 10 V, 5.5 V
$ 0.62
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
RS (Formerly Allied Electronics)IRF7451PBF0665Bulk
1d
AvnetIRF7451PBF03800
1d
FarnellIRF7451PBF01
8h
Microchip USAIRF7451PBF21413KTube
3h
Win SourceWS-IRF7451PBF125.70090
10h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRF7451PBF.

IHS

Datasheet8 pagine21 anni fa

TME

Future Electronics

Parti alternative

Questo componente
Parti alternative
InfineonIRF7451PBF
InfineonIRF7451TRPBF
Price @ 1000
$ 0.62
$ 0.549
Stock
452,332
960,833
Authorized Distributors
3
6
Mount
Surface Mount
Surface Mount
Case/Package
SO
SO
Drain to Source Voltage (Vdss)
150 V
150 V
Continuous Drain Current (ID)
3.6 A
3.6 A
Threshold Voltage
5.5 V
-
Rds On Max
-
90 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
990 pF
990 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-11-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descrizioni

Descrizioni di Infineon IRF7451PBF fornite dai suoi distributori.

INFINEON IRF7451PBF MOSFET Transistor, N Channel, 3.6 A, 150 V, 90 mohm, 10 V, 5.5 V
Fly-Wing Technology
150V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
SMPS HEXFET POWER MOSFET Power Field-Effect Transistor, 3.6A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA
ComSIT Distribution GmbH
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:3.6A; On Resistance, Rds(on):90mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
Newark
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
Infineon
MOSFET, N, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:150V; Current, Id Cont:3.6A; Resistance, Rds On:0.09ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5.5V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:29A; Pin Configuration:(1+2+3)S,4G, (8+7+6+5)D; Power, Pd:2.5W; Time, Fall:15ns; Time, Rise:4.2ns; Transistors, No. of:1; Voltage, Vds Max:150V; Voltage, Vgs Max:30V
Farnell

Immagini

Infineon
TME
International Rectifier

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Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRF7451 PBF