Infineon IRF7389PBF

Dual N/P-Channel 30 V 0.29/0.058 Ohm 22/23 nC HEXFET® Power Mosfet - SOIC-8

30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:7.3A; On Resistance, Rds(on):29mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):46mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Cont Current Id P Channel:5.3A; Current Id Max:7.3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; On State Resistance Max:29mohm; On State Resistance P Channel Max:58mohm; Package / Case:SOIC; Power Dissipation P Channel 2:2.5W; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:30A; Pulse Current Idm P Channel:30A; Row Pitch:6.3mm; SMD Marking:F7389; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V