Diodes Inc. ZXMC3A17DN8TA
$ 0.529
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | ZXMC3A17DN8TA | 168 | 1 | Cut Tape | ||||||||
| Arrow Electronics | ZXMC3A17DN8TA | 1000 | 500 | |||||||||
| Verical | ZXMC3A17DN8TA | 1000 | 500 | |||||||||
| TME | ZXMC3A17DN8TA | 15 | 1 | 7h | ||||||||
| Avnet | ZXMC3A17DN8TA | 0 | 500 | 1d |
Cronologia dell'inventario
Tendenza a 3 mesi: -14.16%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Diodes Inc. ZXMC3A17DN8TA.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-10-01
Lifecycle StatusProduction (Last Updated: 5 months ago)
Parti correlate
VishaySI4532CDY-T1-GE3
SI4532CDY-T1-GE3 DUAL N/P-CHANNEL MOSFET TRANSISTOR,4.3 A,6 A,30V,8-PIN SOIC
VishaySI4936BDY-T1-E3
SI4936BDY-T1-E3 Dual N-channel MOSFET Transistor; 5.9 A; 30 V; 8-Pin SOIC
Descrizioni
Descrizioni di Diodes Inc. ZXMC3A17DN8TA fornite dai suoi distributori.
Dual N & P Channel 30 V 5.4 A 1.25 W Surface Mount Complementary Mosfet - SOIC-8
Trans MOSFET N/P-CH 30V 4.1A/3.4A 8-Pin SOIC T/R
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET, N+P, 30V VDS, 20±V VGS
Diodes Inc SCT
MOSFET N/P-CHAN DUAL 30V 8SOIC
MOSFET, N P CHANNEL, DUAL, ENHANCE,30V, SO8
Small Signal Field-Effect Transistor, 5.4A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, DUAL, NP, 30V, SO-8; Module Configuration:Dual; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.4A; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:1(S1), 2(G1),3(S2),4(G2),5+6(D2),7+8(D1); Power Dissipation Pd:1.25W; Power Dissipation Pd:2.1W; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Cronologia dell'inventario
Tendenza a 3 mesi: -14.16%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight73.992255 mg
Technical
Continuous Drain Current (ID)5.4 A
Current Rating5.4 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time8.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance600 pF
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation2.1 W
Rds On Max50 mΩ
Resistance70 mΩ
Rise Time2.9 ns
Threshold Voltage1 V
Turn-Off Delay Time29.2 ns
Turn-On Delay Time1.7 ns
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Diodes Inc. ZXMC3A17DN8TA.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità