Infineon IRF6797MTRPBF
$ 1.21
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-05-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-09-30
LTD Date2023-03-31
Parti correlate
InfineonIRF6898MTRPBF
HEXFET Power MOSFET plus Schottky Diode | MOSFET N-CH 25V 35A DIRECTFET
InfineonIRF6717MTRPBF
Trans MOSFET N-CH Si 25V 38A 7-Pin Direct-FET MX T/R / MOSFET N-CH 25V 38A DIRECTFET
STMicroelectronicsSTL220N3LLH7
N-channel 30 V, 0.00081 Ohm typ., 220 A STripFET H7 Power MOSFET in a PowerFLAT 5x6 package
STMicroelectronicsSTL150N3LLH5
N-channel 30 V, 0.0014 Ohm typ., 35 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 package
STMicroelectronicsSTL260N3LLH6
N-channel 30 V, 0.0011 Ohm typ., 260 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package
Descrizioni
Descrizioni di Infineon IRF6797MTRPBF fornite dai suoi distributori.
MOSFET N-CH 25V 36A DIRECTFET-MX / Trans MOSFET N-CH Si 25V 36A 7-Pin Direct-FET MX T/R
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 36 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
N Channel, MOSFET, 25V, 36A, DirectFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V ;RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
MountSurface Mount
Number of Pins7
Number of Terminals3
Technical
Continuous Drain Current (ID)36 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance1.4 mΩ
Drain to Source Voltage (Vdss)25 V
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.79 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation89 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage25 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance1.4 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max1.4 mΩ
Rise Time32 ns
Turn-Off Delay Time20 ns
Turn-On Delay Time22 ns
Dimensions
Height700 µm
Length6.35 mm
Width5.05 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità