Infineon IRF6785MTRPBF
$ 1.172
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRF6785MTRPBF | 457.579 | 17h | |||||||||
| Arrow Electronics | IRF6785MTRPBF | 89.967 | 1 | |||||||||
| RS (Formerly Allied Electronics) | IRF6785MTRPBF | 0 | 4800 | Bulk | 6h | |||||||
| Future Electronics | IRF6785MTRPBF | 0 | 4800 | Tape & Reel | ||||||||
| Avnet | IRF6785MTRPBF | 0 | 4800 | 19h |
Cronologia dell'inventario
Tendenza a 3 mesi: -1.55%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Modelli CAD
Scarica il simbolo Infineon IRF6785MTRPBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta |
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-04-18
Lifecycle StatusProduction (Last Updated: 3 months ago)
Parti correlate
Descrizioni
Descrizioni di Infineon IRF6785MTRPBF fornite dai suoi distributori.
MOSFET, 200V, 15A, 100 MOHM, 26 NC QG, MED CAN
MOSET TRANSISTOR; Transistor Type:MOSFET; Continuous Drain Current, Id:3.4A; Drain Source Voltage, Vds:200V; On Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:5V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes
A 200V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 19 amperes optimized with low on resistance for applications such as Class D Audio Amplifier. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in pa
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -1.55%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins5
Number of Terminals3
Technical
Continuous Drain Current (ID)3.4 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)200 V
Fall Time14 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.5 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation57 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage200 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance100 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max100 mΩ
Rise Time8.6 ns
Schedule B8541290080
Turn-Off Delay Time7.2 ns
Turn-On Delay Time6.2 ns
Dimensions
Height700 µm
Length6.35 mm
Width5.05 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità