onsemi FDMS2672

N-Channel UltraFET Trench® MOSFET 200V, 20A, 77mΩ
$ 2.466
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Scarica le schede tecniche e la documentazione del produttore per onsemi FDMS2672.

Master Electronics

Datasheet0 pagine0 anni fa

onsemi

IHS

Fairchild Semiconductor

Farnell

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Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-01-06
Lifecycle StatusProduction (Last Updated: 1 week ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 1 week ago)

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Descrizioni

Descrizioni di onsemi FDMS2672 fornite dai suoi distributori.

N-Channel UltraFET Trench® MOSFET 200V, 20A, 77mΩ
onsemi N-Ch UltraFET MOSFET, Vds=200V, Id=20A, PQFN8, SMD, 8-Pin
FDMS2672 Series 200 V 77 mOhm N-Channel UltraFET Trench Mosfet - Power-56-8
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:3.7A; Drain Source Voltage, Vds:200V; On Resistance, Rds(on):64mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3.1V
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
MOSFET, N, SMD, MLP; Transistor Type:UltraFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:3.7A; Resistance, Rds On:0.077ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3.1V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:20A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS2672; Voltage, Vds Max:200V; Voltage, Vgs th Max:4V

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  • ON Semiconductor Inc.
  • onsemiconductor
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