onsemi FDMS2672

N-Channel UltraFET Trench® MOSFET 200V, 20A, 77mΩ
$ 1.417
Production
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
Future ElectronicsFDMS267227.0003KTape & Reel
Avnet
2
FDMS267230003K
17h
DigiKey
3
FDMS2672CT-ND16361Cut Tape
Flip ElectronicsFDMS26722705
3h
Newark
2
FDMS267203KTape & Reel

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FDMS2672.

Master Electronics

Datasheet0 pagine0 anni fa

onsemi

IHS

Fairchild Semiconductor

Farnell

Cronologia dell'inventario

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Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-01-06
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descrizioni

Descrizioni di onsemi FDMS2672 fornite dai suoi distributori.

N-Channel UltraFET Trench® MOSFET 200V, 20A, 77mΩ
onsemi
FDMS2672 Series 200 V 77 mOhm N-Channel UltraFET Trench Mosfet - Power-56-8
Future Electronics
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:3.7A; Drain Source Voltage, Vds:200V; On Resistance, Rds(on):64mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3.1V
Newark
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Fairchild Semiconductor
MOSFET, N, SMD, MLP; Transistor Type:UltraFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:3.7A; Resistance, Rds On:0.077ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3.1V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:20A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS2672; Voltage, Vds Max:200V; Voltage, Vgs th Max:4V
Farnell

Immagini

Newark
RS
Augswan
LZChips
LCSC
Rochester Electronics
RS
iiiC

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