Infineon IRF6721STRPBF
$ 0.464
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-10-22
Lifecycle StatusProduction (Last Updated: 1 month ago)
Parti correlate
InfineonIRF8327STRPBF
Single N-Channel 30 V 5.1 mOhm 9.2 nC HEXFET® Power Mosfet - DirectFET®
NXP SemiconductorsPSMN5R9-30YL,115
Power Field-Effect Transistor, 78A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
NXP SemiconductorsPH9030AL,115
Compliant Surface Mount 9 ns Lead Free Tape & Reel (TR) 28 ns 8 mΩ 11 MΩ
onsemiNTMFS4839NT1G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 9.5A Ta 64A Tc 64A 2.17W 7ns
Descrizioni
Descrizioni di Infineon IRF6721STRPBF fornite dai suoi distributori.
Single N-Channel 30 V 7.3 mOhm 11 nC HEXFET® Power Mosfet - DirectFET®
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 14 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
N-CH MOSFET, HEXFET, 30V, 14A, DIRECTFET SQ; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V ;RoHS Compliant: Yes
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Control FET Applications; Low Conduction Losses; Optimized for High Frequency Switching; Low Package Inductance
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins4
Number of Terminals2
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance7.3 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time5.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.43 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Number of Elements1
On-State Resistance7.3 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation42 W
Rds On Max7.3 mΩ
Rise Time8.9 ns
Turn-Off Delay Time9.3 ns
Turn-On Delay Time7.8 ns
Dimensions
Height506 µm
Length4.826 mm
Width3.95 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità