Infineon IRF6715MTRPBF
$ 1.434
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-08-15
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-05-15
LTD Date2023-11-15
Parti correlate
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InfineonIRF6797MTRPBF
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InfineonIRF6716MTRPBF
MOSFET N-CH 25V 39A DIRECTFET / Trans MOSFET N-CH Si 25V 39A 7-Pin Direct-FET MX T/R
STMicroelectronicsSTL160N3LLH6
N-channel 30 V, 0.0011 Ohm typ., 45 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package
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N-channel 30 V, 0.0014 Ohm typ., 35 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 package
onsemiNTMFS4H02NFT1G
Power Field-Effect Transistor, 193A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Descrizioni
Descrizioni di Infineon IRF6715MTRPBF fornite dai suoi distributori.
Trans MOSFET N-CH 25V 34A 7-Pin Direct-FET MX T/R
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 34 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
MOSET TRANSISTOR; Transistor Type:MOSFET; Continuous Drain Current, Id:34A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0013ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.9V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
MountSurface Mount
Number of Pins7
Number of Terminals3
Technical
Continuous Drain Current (ID)34 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance1.6 mΩ
Drain to Source Voltage (Vdss)25 V
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.34 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation78 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage25 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance1.6 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max1.6 mΩ
Rise Time31 ns
Schedule B8541290080
Turn-Off Delay Time16 ns
Turn-On Delay Time20 ns
Dimensions
Height700 µm
Length6.35 mm
Width5.05 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità