Infineon IRF6648TRPBF
$ 1.07
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRF6648TRPBF | 4800 | 4800 | 21h | ||||||||
| Rochester Electronics | IRF6648TRPBF | 32.924 | 19h | |||||||||
| DigiKey | IRF6648TRPBFCT-ND | 16.877 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRF6648TRPBF | 3468 | 1 | |||||||||
| Newark | IRF6648TRPBF | 0 | 1 | Cut Tape |
Cronologia dell'inventario
Tendenza a 3 mesi: +7.53%
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Price @ 1000
$ 1.07
$ 3.74
Stock
808,461
549,121
Authorized Distributors
6
1
Mount
Surface Mount
Surface Mount
Case/Package
-
-
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
86 A
86 A
Threshold Voltage
4 V
-
Rds On Max
7 mΩ
7 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.8 W
89 W
Input Capacitance
2.12 nF
2.12 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-08-30
Lifecycle StatusProduction (Last Updated: 5 months ago)
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Descrizioni
Descrizioni di Infineon IRF6648TRPBF fornite dai suoi distributori.
Single N-Channel 60 V 7 mOhm 50 nC HEXFET® Power Mosfet - DirectFET®
Power MOSFET, N Channel, 60 V, 86 A, 0.0055 ohm, DirectFET MN, Surface Mount
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:69A; On Resistance, Rds(on):7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MN ;RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +7.53%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins5
Number of Terminals3
Technical
Continuous Drain Current (ID)86 A
Current Rating86 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance7 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.12 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.8 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage60 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance7 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max7 mΩ
Rise Time29 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time28 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)60 V
Dimensions
Height700 µm
Length5.45 mm
Width5.05 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità