Infineon IRF6643TRPBF
$ 0.859
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IRF6643TRPBF | 44 | 1 | Cut Tape | ||||||||
| RS (Formerly Allied Electronics) | IRF6643TRPBF | 27 | 1 | Bulk | 4h | |||||||
| Arrow Electronics | IRF6643TRPBF | 14.365 | 1 | |||||||||
| DigiKey | IRF6643TRPBFCT-ND | 3 | 1 | Cut Tape | ||||||||
| Farnell | IRF6643TRPBF | 7 | 5 | Cut Tape | 14h |
Cronologia dell'inventario
Tendenza a 3 mesi: -0.15%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF6643TRPBF.
Modelli CAD
Scarica il simbolo Infineon IRF6643TRPBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta |
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Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.859
$ 3.65
$ 3.65
Stock
260,621
135,997
135,997
Authorized Distributors
6
2
2
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
-
-
-
Drain to Source Voltage (Vdss)
150 V
150 V
150 V
Continuous Drain Current (ID)
6.2 A
6.2 A
6.2 A
Threshold Voltage
4 V
4 V
4 V
Rds On Max
34.5 mΩ
34.5 mΩ
34.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
2.8 W
-
-
Input Capacitance
2.34 nF
2.34 nF
2.34 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-10-30
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-03-31
LTD Date2025-09-30
Parti correlate
InfineonIRFS5615TRLPBF
Digital Audio 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
InfineonIRFR4615TRLPBF
N CH POWER MOSFET, HEXFET, 150V, 33A, DPAK; Transistor Polarity:N Channel; Conti
Descrizioni
Descrizioni di Infineon IRF6643TRPBF fornite dai suoi distributori.
Single N-Channel 150 V 34.5 mOhm 39 nC HEXFET® Power Mosfet - DirectFET®
Trans MOSFET N-CH Si 150V 6.2A 7-Pin Direct-FET MZ T/R
A 150V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 35 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
N CHANNEL MOSFET, 150V, 6.2mA; Transistor Polarity:N Channel; Continuous Drain Current, Id:6.2mA; Drain Source Voltage, Vds:150V; On Resistance, Rds(on):0.0029ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -0.15%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins5
Number of Terminals3
Technical
Continuous Drain Current (ID)6.2 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance34.5 mΩ
Drain to Source Voltage (Vdss)150 V
Fall Time4.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.34 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation89 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage150 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance34.5 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max34.5 mΩ
Rise Time5 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time13 ns
Turn-On Delay Time9.2 ns
Dimensions
Height700 µm
Length6.35 mm
Width5.0546 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF6643TRPBF.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità