Infineon IRF6637TRPBF
$ 0.88
Obsolete
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-02-15
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2008-07-04
LTD Date2008-12-30
Parti correlate
InfineonIRF8327STRPBF
Single N-Channel 30 V 5.1 mOhm 9.2 nC HEXFET® Power Mosfet - DirectFET®
STMicroelectronicsSTD75N3LLH6
N-channel 30 V, 0.0042 Ohm, 75 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
NXP SemiconductorsPH9030AL,115
Compliant Surface Mount 9 ns Lead Free Tape & Reel (TR) 28 ns 8 mΩ 11 MΩ
Descrizioni
Descrizioni di Infineon IRF6637TRPBF fornite dai suoi distributori.
Single N-Channel 30 V 7.7 mOhm 11 nC HEXFET® Power Mosfet - DirectFET®
Trans MOSFET N-CH 30V 14A 7-Pin Direct-FET MP T/R
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 52 amperes., MG-WDSON-5, RoHS
Infineon SCT
Power Field-Effect Transistor, 14A I(D), 30V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IRF6637 12V-300V N-CHANNEL POWER MOSFET;
DirectFETPower MOSFET DIRECTFET MP
2.3W(Ta),42W(Tc) 20V 2.35V@ 250¦ÌA 17nC@ 4.5 V 1N 30V 7.7m¦¸@ 14A,10V 14A,59A 1.33nF@15V WDSON-5 , 6.35mm*5.05mm*700¦Ìm
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11A; On-Resistance, Rds(on):7.7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MP RoHS Compliant: No
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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Specifiche tecniche
Physical
MountSurface Mount
Number of Pins5
Number of Terminals2
Technical
Continuous Drain Current (ID)14 A
Current Rating14 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance7.7 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time3.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.33 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation89 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance7.7 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.3 W
Rds On Max7.7 mΩ
Rise Time15 ns
Turn-Off Delay Time14 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)30 V
Dimensions
Height705 µm
Length6.35 mm
Width5.05 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità