Infineon IRF640NPBF

Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.15 Ohm; Id 18A; TO-220AB; Pd 150W; Vgs +/-20V
$ 0.497
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Prezzo e stock

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DistributorSKUMinPkg
Avnet
2
IRF640NPBF45.6321
1d
NewarkIRF640NPBF61.9881
Future Electronics
2
IRF640NPBF141.20740Tube
Arrow Electronics
2
IRF640NPBF114.3501
RutronikTMOSP1183755050
9h

Schede tecniche e documenti

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IHS

Datasheet11 pagine15 anni fa
Datasheet12 pagine15 anni fa
Datasheet12 pagine21 anni fa

element14 APAC

Newark

Sierra IC

iiiC

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-10-09
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2014-01-09
LTD Date2014-07-09

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Descrizioni

Descrizioni di Infineon IRF640NPBF fornite dai suoi distributori.

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;TO-220AB;PD 150W;VGS +/-20V
RS (Formerly Allied Electronics)
Transistor: N-MOSFET; unipolar; 200V; 18A; 0.15ohm; 150W; -55+175 deg.C; THT; TO220
Maritex
200 Volt 18 Amp Single N-Channel HEXFET Power MOSFET TO-220 Fast Switching
Jameco
Single N-Channel 200 V 0.15 Ohm 67 nC HEXFET® Power Mosfet - TO-220-3
Future Electronics
Infineon Technologies N channel HEXFET power MOSFET, 200 V, 18 A, TO-220, IRF640NPBF
Burklin Elektronik
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Transistor MOSFET N-Ch. 18A/200V TO220 IRF 640 N PBF
Rapid Electronics
Power MOSFET, N Channel, 200 V, 18 A, 0.15 ohm, TO-220AB, Through Hole
Avnet
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB Tube
Verical
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 150 W
Distrelec
200V 18A 150W 150m¦¸@10V,11A 4V@250¦ÌA N Channel TO-220(TO-220-3) MOSFETs ROHS
Dasenic
HEXFET POWER MOSFET Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ComSIT Distribution GmbH
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):150mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
Newark
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Infineon
MOSFET, N, 200V, 18A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:18A; Resistance, Rds On:0.15ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:72A; No. of Pins:3; Power Dissipation:150W; Power, Pd:150W; Thermal Resistance, Junction to Case A:1°C/W; Voltage, Vds Max:200V; Voltage, Vgs th Max:4V
Farnell

Immagini

Infineon
DKO Electronshik
Farnell
TME
RS
B+D Enterprises
RS APAC
Newark
Micros
Conrad
iiiC
RS (Formerly Allied Electronics)
South Microelectronics
Distrelec
UTSource
International Rectifier
Jameco
LCSC
element14
SOS electronic

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRF 640 N PBF
  • IRF640N
  • IRF640N PBF
  • IRF640NPBF.
  • SP001570078