Infineon IRF3315PBF
$ 0.49
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF3315PBF | 244 | 1 | Bulk | 1d | |||||||
| Farnell | IRF3315PBF | 0 | 1 | 7h | ||||||||
| Microchip USA | IRF3315 | 240 | 600 | Tube | 2h | |||||||
| Win Source | WS-IRF3315 | 20 | 40 | 9h | ||||||||
| Worldway Electronics | IRF3315 | 19.413 | 7 | Tube | 8h |
Cronologia dell'inventario
Tendenza a 3 mesi: -8.96%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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0 parti disponibili
Modelli CAD
Scarica il simbolo Infineon IRF3315PBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-06-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-10-31
LTD Date2021-04-30
Parti correlate
InfineonIRFB4019PBF
150V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
InfineonIRF3415PBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.042Ohm;ID 43A;TO-220AB;PD 200W;VGS +/-20V
InfineonIRF6218PBF
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 120 Milliohms;ID -27A;TO-220AB;PD 250W
Descrizioni
Descrizioni di Infineon IRF3315PBF fornite dai suoi distributori.
Single N-Channel 150 V 0.082 Ohm 95 nC HEXFET® Power Mosfet - TO-220-3
Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A) | MOSFET N-CH 150V 27A TO-220AB
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
MOSFET, 150V, 21A, 70 mOhm, 63.3 nC Qg, TO-220AB
Trans MOSFET N-CH 150V 23A 3-Pin(3+Tab) TO-220AB
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 136 W
Power Field-Effect Transistor, 27A I(D), 150V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 150V, 21A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:150V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:136W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:27A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.6°C/W; Package / Case:TO-220AB; Power Dissipation Pd:136W; Power Dissipation Pd:136W; Pulse Current Idm:108A; Termination Type:Through Hole; Voltage Vds:150V; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -8.96%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)23 A
Current Rating27 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)150 V
Dual Supply Voltage150 V
Element ConfigurationSingle
Fall Time38 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation94 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance70 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation94 W
Rds On Max70 mΩ
Recovery Time260 ns
Resistance82 mΩ
Rise Time32 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time49 ns
Turn-On Delay Time9.6 ns
Voltage Rating (DC)150 V
Dimensions
Height19.15 mm
Length10.54 mm
Width4.69 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità