Infineon IRF5305PBF
$ 0.555
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Cronologia dell'inventario
Tendenza a 3 mesi: -5.64%
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Schede tecniche e documenti
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-07-01
Lifecycle StatusProduction (Last Updated: 5 months ago)
LTB Date2012-08-25
LTD Date2013-02-25
Parti correlate
InfineonIRFZ34NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 29A;TO-220AB;PD 68W;VGS +/-20V
InfineonIRLZ34NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.035Ohm;ID 30A;TO-220AB;PD 68W;VGS +/-16V
Descrizioni
Descrizioni di Infineon IRF5305PBF fornite dai suoi distributori.
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.06Ohm;ID -31A;TO-220AB;PD 110W;VGS +/-20V
Single P-Channel 55 V 0.06 Ohm 63 nC HEXFET® Power Mosfet - TO-220-3
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Power MOSFET, P Channel, 55 V, 31 A, 0.06 ohm, TO-220AB, Through Hole
Trans MOSFET P-CH Si 55V 31A 3-Pin(3+Tab) TO-220AB Tube
277.8W 20V 4.5V@1.3mA 63nC(Max) @ 10V 1P 650V 110m¦¸@ 10V,12.7A 31.2A 1.2nF@ 25V TO-220
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: P Power dissipation: 110 W
HEXFET POWER MOSFET Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
P Channel Mosfet, -55V, 31A, To-220Ab; Channel Type:P Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:31A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRF5305PBF.
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -5.64%
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Specifiche tecniche
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)31 A
Current Rating-31 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)-55 V
Dual Supply Voltage-55 V
Element ConfigurationSingle
Fall Time63 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation83 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
On-State Resistance60 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation110 W
Rds On Max60 mΩ
Recovery Time110 ns
Resistance60 mΩ
Rise Time66 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage-4 V
Turn-Off Delay Time39 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)-55 V
Dimensions
Height19.3 mm
Lead Pitch2.54 mm
Length10.5156 mm
Width4.69 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF5305PBF.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità