Infineon IRF5210STRLPBF

MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 60 Milliohms; ID -38A; D2Pak; PD 170W; -55degc
$ 1.625
Production
Pagina del produttoreScheda dati

Prezzo e stock

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DistributorSKUMinPkg
Avnet
2
IRF5210STRLPBF72.000800
4h
NewarkIRF5210STRLPBF21.0311Cut Tape
RutronikTMOSP118013200800
10h
RS (Formerly Allied Electronics)IRF5210STRLPBF691Bulk
14h
Arrow Electronics
2
IRF5210STRLPBF60321

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRF5210STRLPBF.

Newark

Datasheet11 pagine16 anni fa
Datasheet10 pagine28 anni fa

IHS

element14 APAC

iiiC

RS (Formerly Allied Electronics)

Cronologia dell'inventario

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Parti alternative

Questo componente
Parti alternative
InfineonIRF5210STRLPBF
InfineonAUIRF5210STRL
Price @ 1000
$ 1.625
$ 3.575
Stock
1,011,199
86,026
Authorized Distributors
6
2
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
TO-263-3
Drain to Source Voltage (Vdss)
-100 V
-100 V
Continuous Drain Current (ID)
38 A
38 A
Threshold Voltage
-4 V
-
Rds On Max
60 mΩ
60 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3.1 W
170 W
Input Capacitance
2.78 nF
2.78 nF

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-08-14
Lifecycle StatusProduction (Last Updated: 5 months ago)

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Descrizioni

Descrizioni di Infineon IRF5210STRLPBF fornite dai suoi distributori.

MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 60 Milliohms;ID -38A;D2Pak;PD 170W;-55degc
RS (Formerly Allied Electronics)
Single P-Channel 100 V 0.06 Ohm 180 nC HEXFET® Power Mosfet - D2PAK
Future Electronics
Power MOSFET, P Channel, 100 V, 38 A, 0.06 ohm, TO-263 (D2PAK), Surface Mount
Avnet
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET P-CH 100V 38A 3-Pin (2+Tab) D2PAK T/R
Verical
Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
ComSIT Distribution GmbH
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
Infineon
; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-40A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-4V ;RoHS Compliant: Yes
Newark
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 38 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 60 / Gate-Source Voltage V = 20 / Fall Time ns = 55 / Rise Time ns = 63 / Turn-OFF Delay Time ns = 72 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 170
Distrelec

Immagini

Infineon
element14
element14 APAC
Augswan
element14
South Microelectronics
element14 APAC
TME
RS (Formerly Allied Electronics)
RS
Micros
element14 APAC
Conrad
Future Electronics
Component Sense
Distrelec
LCSC
Jameco
LZChips

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRF5210STRLPBF.
  • SP001554020