Infineon IRF350
$ 26.265
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Modelli CAD
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| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta | ||
 SnapEDA | 3D | Scarica |
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Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 26.265
$ 29.275
Stock
8,266
21,258
Authorized Distributors
3
2
Mount
Through Hole
Through Hole
Case/Package
TO-3
TO-3
Drain to Source Voltage (Vdss)
400 V
400 V
Continuous Drain Current (ID)
14 A
14 A
Threshold Voltage
4 V
-
Rds On Max
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
150 W
150 W
Input Capacitance
-
-
Parti correlate
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Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Descrizioni
Descrizioni di Infineon IRF350 fornite dai suoi distributori.
Trans Mosfet N-Ch 400V 14A 3-Pin(2+Tab) To-3. Note :rohs Non-Compliant Rohs Compliant: No
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package, TO-204AE-2
Infineon SCT
N CHANNEL MOSFET, 400V, 14A, TO-204AA
HEXFET, Hi-Rel 400V, 14A, 0.300 ohm
Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Body MaterialMetal
Case/PackageTO-3
MountThrough Hole
Number of Pins2
Number of Terminals2
Weight12 g
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance400 mΩ
Drain to Source Voltage (Vdss)400 V
Dual Supply Voltage400 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation150 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance300 mΩ
Power Dissipation150 W
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time170 ns
Turn-On Delay Time35 ns
Dimensions
Height7.74 mm
Lead Pitch11 mm
Conformità
Classificazione ambientale
Radiation HardeningNo
REACH SVHCYes
RoHSNon-Compliant
Dichiarazioni di conformità