Infineon IRF1324S-7PPBF
$ 8.75
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Modelli CAD
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Questo componente
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Price @ 1000
$ 8.75
$ 2.32
$ 2.32
Stock
155,809
49,360
49,360
Authorized Distributors
2
2
2
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
TO-263-3
TO-263-3
Drain to Source Voltage (Vdss)
24 V
24 V
24 V
Continuous Drain Current (ID)
240 A
240 A
240 A
Threshold Voltage
4 V
-
-
Rds On Max
1 mΩ
1.65 mΩ
1.65 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
300 W
300 W
300 W
Input Capacitance
7.7 nF
7.59 nF
7.59 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-10-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-12-02
LTD Date2017-09-02
Parti correlate
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Mosfet, N-Ch, 24V, 180A, H2Pak-6 Rohs Compliant: Yes |Stmicroelectronics STH300NH02L-6
STMicroelectronicsSTH270N4F3-6
STH270N4F3-6 N-channel MOSFET Transistor, 180 A, 40 V, 8-Pin H2PAK
Descrizioni
Descrizioni di Infineon IRF1324S-7PPBF fornite dai suoi distributori.
24V Single N-Channel HEXFET Power MOSFET in a Lead Free 7-Lead D2-Pak package, D2PAK7P, RoHS
Infineon SCT
MOSFET, Power;N-Ch;VDSS 24V;RDS(ON) 0.8Milliohm;ID 429A;D2Pak;PD 300W;VGS +/-20
Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 300 W
Trans MOSFET N-CH 24V 429A 7-Pin(6+Tab) D2PAK Tube
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
HEXFET POWER MOSFET Power Field-Effect Transistor, 240A I(D), 24V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N D2-PAK/7; Transistor Polarity:N Channel; Continuous Drain Current Id:429A; Drain Source Voltage Vds:24V; On Resistance Rds(on):1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:230mJ; Current Id Max:429A; Fall Time tf:93ns; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Package / Case:D2-PAK; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:1640A; Rate of Voltage Change dv / dt:1.6V/ns; Rise Time:240ns; Storage Temperature Max:175°C; Storage Temperature Min:-55°C; Termination Type:SMD; Voltage Vds:24V; Voltage Vds Typ:24V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins7
Number of Terminals6
Technical
Continuous Drain Current (ID)240 A
Current Rating429 A
Drain to Source Breakdown Voltage24 V
Drain to Source Resistance1 mΩ
Drain to Source Voltage (Vdss)24 V
Dual Supply Voltage24 V
Element ConfigurationSingle
Fall Time93 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.7 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage24 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance1 mΩ
Package Quantity3000
Power Dissipation300 W
Rds On Max1 mΩ
Recovery Time107 ns
Rise Time240 ns
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time86 ns
Turn-On Delay Time19 ns
Voltage Rating (DC)24 V
Dimensions
Height5.084 mm
Length10.795 mm
Width8.15 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità