Infineon IR2181SPBF

Tube IR2181SPBF Half-Bridge 1996 gate driver 60ns -40C~150C TJ 1.9A 2.3A 625mW
$ 2.049
NRND
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Schede tecniche e documenti

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SHENGYU ELECTRONICS

Datasheet21 pagine21 anni fa

IHS

iiiC

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Parti alternative

Questo componente
Parti alternative
Price @ 1000
$ 2.049
$ 1.27
Stock
772,860
626,718
Authorized Distributors
6
6
Case/Package
SOP
SOP
Number of Pins
8
8
Channel Type
Independent
Independent
Number of Drivers
2
2
Max Output Current
2.3 A
2.3 A
Rise Time
60 ns
60 ns
Fall Time
35 ns
35 ns
Min Supply Voltage
10 V
10 V
Max Supply Voltage
20 V
20 V
Max Power Dissipation
625 mW
625 mW

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8542.39.00.60
Introduction Date1999-10-22
Lifecycle StatusNRND (Last Updated: 3 months ago)

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Descrizioni

Descrizioni di Infineon IR2181SPBF fornite dai suoi distributori.

Tube IR2181SPBF Half-Bridge 1996 gate driver 60ns -40C~150C TJ 1.9A 2.3A 625mW
IR2181 Series 600 V 1.9 A 20 V Supply Dual High And Low Side Driver - SOIC-8
MOSFET and Power Driver 2.3A 2-OUT Hi/Lo Side Non-Inverting 8-Pin SOIC Tube
Avnet Japan
Bridge Driver IC Operating temperature: -40...+125 °C Output voltage: 10...20 V Power supply: 10...20 V Input: logic input Package: SO-8 Sink output current: 2.3 A Source output current: 1.9 A
MOSFET Driver IC; Device Type:High and Low Side; Supply Voltage Min:10V; Supply Voltage Max:25V; Termination Type:SMD; Package/Case:8-SOIC; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; Fall Time, tf:20ns ;RoHS Compliant: Yes
EiceDRIVER™ 600 V high and low-side Gate Driver IC with typical 1.9 A source and 2.3 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14-Lead PDIP .For the new version with our SOI technology we recommend 2ED2181S06F, providing integrated bootstrap diode, better robustness and higher switching frequency
The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
DRIVER, MOSFET, HIGH/LOW SIDE, 2181; Device Type:MOSFET; Module Configuration:High Side / Low Side; Peak Output Current:2.3A; Input Delay:180ns; Output Delay:220ns; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Base Number:2181; Device Marking:IR2181S; IC Generic Number:2181; Logic Function Number:2181; No. of Outputs:2; Offset Voltage:600V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:1.9A; Output Current + Max:1700mA; Output Sink Current Min:1700mA; Output Source Current Min:1700mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:SOIC; Power Dissipation Pd:0.625W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD; Voltage Vcc Max:25V; Voltage Vcc Min:10V

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IR2181SPBF.
  • IRFIR2181SPBF
  • SP001537992