Infineon IPP65R280C6XKSA1

Transistor Mosfet N-ch 650V 13.8A 3-PIN TO-220 T/r
$ 1.07
Obsolete
Pagina del produttoreScheda dati

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Schede tecniche e documenti

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IHS

Datasheet19 pagine8 anni fa
Datasheet19 pagine15 anni fa

element14 APAC

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Parti alternative

Questo componente
Parti alternative
Price @ 1000
$ 1.07
$ 1.07
Stock
204,463
204,463
Authorized Distributors
2
2
Mount
Through Hole
Through Hole
Case/Package
TO-220
TO-220
Drain to Source Voltage (Vdss)
650 V
650 V
Continuous Drain Current (ID)
13.8 A
13.8 A
Threshold Voltage
-
-
Rds On Max
280 mΩ
280 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
104 W
104 W
Input Capacitance
950 pF
950 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-08-19
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-08-31
LTD Date2019-02-28

Parti correlate

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STMicroelectronicsSTP18N65M5
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in TO-220 package
STMicroelectronicsSTP19NM50N
N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-220
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 15 A, 260 mΩ, TO-220

Descrizioni

Descrizioni di Infineon IPP65R280C6XKSA1 fornite dai suoi distributori.

Transistor MOSFET N-CH 650V 13.8A 3-Pin TO-220 T/R
Power Field-Effect Transistor, 13.8A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS
Infineon SCT
Mosfet, N-Ch, 13.8A, 650V, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:13.8A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.25Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

Alias del produttore

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  • Infineon Technologies
  • INF
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  • INFINEON TECH
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  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IPP65R280C6