Infineon IPL60R360P6SATMA1
$ 0.74
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IPL60R360P6SATMA1 | 240.819 | 16h | |||||||||
| DigiKey | IPL60R360P6SATMA1CT-ND | 5930 | 1 | Cut Tape | ||||||||
| Newark | IPL60R360P6SATMA1 | 0 | 5 | Cut Tape | ||||||||
| Future Electronics | IPL60R360P6SATMA1 | 0 | 5K | Tape & Reel | ||||||||
| Avnet | IPL60R360P6SATMA1 | 0 | 5K | 2d |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.21%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IPL60R360P6SATMA1.
Modelli CAD
Scarica il simbolo Infineon IPL60R360P6SATMA1, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
 EE Concierge | SimboloImpronta |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Supply Chain
Country of OriginGermany, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-07-08
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2026-09-30
LTD Date2027-03-31
Parti correlate
STMicroelectronicsSTB18N60M2
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in D2PAK package
STMicroelectronicsSTD16N60M2
N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in DPAK package
STMicroelectronicsSTB18N60DM2
N-channel 600 V, 0.26 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package
onsemiFCD380N60E
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 10.2 A, 380 mΩ, DPAK
Descrizioni
Descrizioni di Infineon IPL60R360P6SATMA1 fornite dai suoi distributori.
Trans MOSFET N-CH 600V 11.3A 8-Pin Thin-PAK EP T/R / Very high commutation ruggedness
Transistor MOSFET N-CH 600V 11.3A 5-Pin SMD T/R
89.3W 20V 4.5V 22nC@ 10V 600V 360m¦¸@ 10V 11.3A 1.01nF@ 100V TSON-8-EP
N-CH 600V 11,3A 360mOhm TPAK5x6
Infineon MOSFET IPL60R360P6SATMA1
The new CoolMOS™ ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs, PG-TSON-8, RoHS
Infineon SCT
IPL60R360 - 600V COOLMOS N-CHANN
Mosfet, N-Ch, 600V, 11.3A, Smd-5; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11.3A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon Technologies IPL60R360P6SATMA1
The new CoolMOS ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height. | Summary of Features: Small footprint (5x6mm); Low profile (1mm); Low parasitic inductance; RoHS compliant; Halogen free mold compound | Benefits: Reduced board space consumption; Increased power density; Short commutation loop; Easy to use products; Environmentally friendly | Target Applications: Adapter; Consumer; Lighting
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.21%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight75.891673 mg
Technical
Continuous Drain Current (ID)11.3 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance360 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.01 nF
Max Dual Supply Voltage600 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation89.3 W
Min Breakdown Voltage600 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance360 mΩ
Package Quantity5000
PackagingTape & Reel
Power Dissipation89.3 W
Rds On Max360 mΩ
Rise Time7 ns
Schedule B8541290080
Turn-Off Delay Time33 ns
Turn-On Delay Time12 ns
Dimensions
Height1.1 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IPL60R360P6SATMA1.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità