Infineon IPD50R800CEAUMA1

MOSFET, N-CH, 500V, 7.6A, TO-252; Available until stocks are exhausted Alternative available
$ 0.354
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IPD50R800CEAUMA1.

IHS

Datasheet13 pagine0 anni fa

Infineon

Cronologia dell'inventario

Trend di 3 mesi:
-47.38%

Modelli CAD

Scarica il simbolo Infineon IPD50R800CEAUMA1, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.

FONTEeCADmCADFILE
EE Concierge
SimboloImpronta
SnapEDA
Impronta
Scarica
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-06-13
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-09-30
LTD Date2025-03-31

Parti correlate

Power Field-Effect Transistor, 2.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Mosfet, N-Ch, 500V, 7.6A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD50R500CEAUMA1
Trans MOSFET N-CH 500V 3A 3-Pin(2+Tab) DPAK
N-Channel Power MOSFET, QFET®, 500 V, 4.5 A, 1.2 Ω, DPAK
Trans MOSFET N-CH 500V 1.8A 3-Pin(2+Tab) DPAK T/R
TRANS MOSFET N-CH 500V 2.5A 3PIN DPAK
N-Channel Power MOSFET, UniFETTM II, 600 V, 5.5 A, 1.25 Ω, DPAK
STMicroelectronicsSTD9N60M2
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in DPAK package
N-Channel Power MOSFET, UniFETTM II, 500 V, 6.5 A, 850 mΩ, DPAK
N-Channel Power MOSFET, SuperFET® II, FAST, 600 V, 4.5 A, 900 mΩ, DPAK
STMicroelectronicsSTD7NK40ZT4
N-Channel 400V - 0.85 Ohm - 5.4A Zener-Protected SuperMESH(TM) POWER MOSFET
STMicroelectronicsSTD6NK50ZT4
N-CHANNEL 500V - 0.93͐2;6; - 5.6A DPAK Zener-Protected SuperMESH™ MOSFET

Descrizioni

Descrizioni di Infineon IPD50R800CEAUMA1 fornite dai suoi distributori.

MOSFET, N-CH, 500V, 7.6A, TO-252; Available until stocks are exhausted Alternative available
Mosfet, N-Ch, 500V, 7.6A, To-252 Rohs Compliant: Yes |Infineon IPD50R800CEAUMA1
Power Field-Effect Transistor, 5A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO252-3, RoHS
Infineon SCT
500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IPD50R800CE
  • IPD50R800CEBTMA1
  • SP001396798