Infineon IPB64N25S320ATMA1

Power MOSFET, N Channel, 250 V, 64 A, 20 Milliohms, TO-263 (D2PAK), 3 Pins, Surface Mount
$ 3.45
Production
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IHS

Datasheet9 pagine11 anni fa

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Parti alternative

Questo componente
Parti alternative
Price @ 1000
$ 3.45
$ 3.585
Stock
409,123
1,191,490
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
TO-263-3
TO-263
Drain to Source Voltage (Vdss)
250 V
250 V
Continuous Drain Current (ID)
64 A
64 A
Threshold Voltage
-
-
Rds On Max
20 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
300 W
300 W
Input Capacitance
7 nF
5.34 nF

Supply Chain

Country of OriginGermany, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-01-20
Lifecycle StatusProduction (Last Updated: 1 month ago)

Parti correlate

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MOSFET N-CH 200V 72A D2PAK / N-Channel 200 V 72A (Tc) 375W (Tc) Surface Mount PG-TO263-3
Power MOSFET, N Channel, 250 V, 17 A, 100 mOhm, TO-263 (D2PAK), 3 Pins, Surface Mount
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 14A Tc 14A 3.1W 49ns
Trans MOSFET N-CH 250V 14A 3-Pin(2+Tab) D2PAK T/R
Power MOSFET, N Channel, 200 V, 84 A, 0.0103 ohm, TO-263 (D2PAK), Surface Mount
Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3

Descrizioni

Descrizioni di Infineon IPB64N25S320ATMA1 fornite dai suoi distributori.

Power MOSFET, N Channel, 250 V, 64 A, 20 Milliohms, TO-263 (D2PAK), 3 Pins, Surface Mount
250V, N-Ch, 20 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T, PG-TO263-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Mosfet, N-Ch, 250V, 64A, 175Deg C, 300W; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:64A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon Technologies IPB64N25S320ATMA1
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: low RDS (on) in trench technology- down to 19.3 mOhm; highest current capability 64A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: Hybrid inverter; DC/DC; Piezo Injection

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IPB64N25S3-20
  • SP 000876596
  • SP000876596