Infineon IPB50R250CPATMA1
Obsolete
Prezzo e stock
Distributori autorizzati
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Rivenditori non autorizzati
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IPB50R250CPATMA1.
Modelli CAD
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-10-24
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-08-31
LTD Date2019-02-28
Parti correlate
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MOSFET N-CH 650V 11A D2PAK / N-Channel 650 V 11A (Tc) 63W (Tc) Surface Mount PG-TO263-3
STMicroelectronicsSTB24N65M2
N-channel 650 V, 0.185 Ohm typ., 16 A MDmesh M2 Power MOSFET in D2PAK package
VishaySIHB12N65E-GE3
E Series N-Channel 650 V 380 mO 35 nC Surface Mount Power Mosfet - D2PAK
Descrizioni
Descrizioni di Infineon IPB50R250CPATMA1 fornite dai suoi distributori.
Trans MOSFET N-CH 550V 13A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 13A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:550V; Current, Id Cont:13A; On State Resistance:0.25ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-263; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; SVHC:Cobalt dichloride
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)13 A
Drain to Source Resistance250 mΩ
Drain to Source Voltage (Vdss)500 V
Fall Time11 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.42 nF
Max Dual Supply Voltage500 V
Max Operating Temperature150 °C
Max Power Dissipation114 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance250 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation114 W
Rds On Max250 mΩ
Rise Time14 ns
Schedule B8541290080
Turn-Off Delay Time80 ns
Turn-On Delay Time35 ns
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IPB50R250CPATMA1.
Conformità
Classificazione ambientale
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità