Infineon IPB080N03LGATMA1

Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R
Production
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DistributorSKUMinPkg
Rochester ElectronicsIPB080N03LGATMA117.239
23h
FarnellIPB080N03LGATMA101
18h
Verical
3
IPB080N03LGATMA11323656
Win SourceWS-IPB080N03L G23.000185
1d
Worldway Electronics
2
IPB080N03LGATMA119.4297Tape & Reel
23h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IPB080N03LGATMA1.

IHS

Datasheet10 pagine15 anni fa
Datasheet10 pagine15 anni fa

element14 APAC

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-11-17
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2019-11-15
LTD Date2020-05-15

Parti correlate

Rochester ElectronicsIPB093N04LG
Trans MOSFET N-CH 40V 50A 3-Pin(2+Tab) D2PAK
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InfineonIPB075N04L G
Trans MOSFET N-CH 40V 50A 3-Pin(2+Tab) TO-263
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InfineonIPB042N03LGATMA1
Trans MOSFET N-CH 30V 70A 3-Pin(2+Tab) D2PAK T/R
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onsemiFDB8447L
Trans MOSFET N-CH 40V 15A 3-Pin(2+Tab) D2PAK T/R
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onsemiIRFW530ATM
Power Field-Effect Transistor, 14A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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VishayIRF630SPBF
Power MOSFET, N Channel, 200 V, 9 A, 0.4 ohm, TO-263 (D2PAK), Surface Mount
Dettagli

Descrizioni

Descrizioni di Infineon IPB080N03LGATMA1 fornite dai suoi distributori.

Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R
Verical
Power Field-Effect Transistor, 48A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IHS
MOSFET, N CH, 50A, 30V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:47W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:47W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
element14 APAC
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO263-3, RoHS
Infineon SCT
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Infineon

Immagini

TME
TME
element14 APAC
Rochester Electronics
iiiC

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IPB080N03L G
  • IPB080N03LG
  • IPB080N03LGXT
  • SP000304104