Infineon IPA60R650CEXKSA1

Single N-Channel 600 V 0.65 Ohm 20.5 nC CoolMOS Power Mosfet - TO-220-3FP, PG-TO220-3, RoHS
$ 0.424
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NewarkIPA60R650CEXKSA13281
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DigiKeyIPA60R650CEXKSA1-ND4441Tube

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IHS

Datasheet16 pagine0 anni fa
Datasheet16 pagine8 anni fa

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Country of OriginGermany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-09-25
Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descrizioni

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Single N-Channel 600 V 0.65 Ohm 20.5 nC CoolMOS Power Mosfet - TO-220-3FP, PG-TO220-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 600 V, 9.9 A, 0.54 ohm, TO-220FP, Through Hole
Avnet
Trans MOSFET N-CH 600V 9.9A 3-Pin(3+Tab) TO-220FP Tube
Verical
Power Field-Effect Transistor, 9.9A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
Mosfet, N-Ch, 600V, 9.9A, To-220Fp; Transistor Polarity:N Channel; Continuous Drain Current Id:9.9A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.54Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon Technologies IPA60R650CEXKSA1
Newark
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
Infineon

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Alias del numero di parte

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  • IPA60R650CE
  • SP001276044