onsemi FCPF600N60Z
$ 1.189
EOL
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Cronologia dell'inventario
Tendenza a 3 mesi: -0.02%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Modelli CAD
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-10-26
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2024-01-03
LTD Date2024-07-03
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Parti correlate
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N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220FP package
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VISHAY SIHF7N60E-E3 MOSFET Transistor, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
onsemiFCPF7N60YDTU
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, TO-220F
STMicroelectronicsSTF11NM50N
N-channel 500 V, 0.40 Ohm typ., 8.5 A MDmesh II Power MOSFET in a TO-220FP package
Descrizioni
Descrizioni di onsemi FCPF600N60Z fornite dai suoi distributori.
N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 7.4 A, 600 mΩ, TO-220F
SuperFET2, 600mohm, TO220F, Zener - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
N-CHANNEL SUPERFET II MOSFET Power Field-Effect Transistor, 7.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 600V 7.4A 3-Pin(3+Tab) TO-220FP Tube
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -0.02%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Weight2.27 g
Technical
Continuous Drain Current (ID)7.4 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.12 nF
Max Operating Temperature150 °C
Max Power Dissipation28 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation28 W
Rds On Max600 mΩ
Rise Time7 ns
Schedule B8541290080
Turn-Off Delay Time39 ns
Turn-On Delay Time13 ns
Dimensions
Height16.07 mm
Length10.36 mm
Width4.9 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità