onsemi FDPF8N50NZ
EOL
Prezzo e stock
Distributori autorizzati
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Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Flip Electronics | FDPF8N50NZ | 3000 | 6d | |||||||||
| Farnell | FDPF8N50NZ | 0 | 1K | Tube | 1d | |||||||
| Win Source | WS-FDPF8N50NZ | 33.000 | 60 | 1h | ||||||||
| Worldway Electronics | FDPF8N50NZ | 25.804 | 7 | Tube | 1d | |||||||
| Fmall Co., Limited | FDPF8N50NZ | 20.450 | >1wk |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-03-18
Lifecycle StatusEOL (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Parti correlate
VishaySIHF8N50D-E3
MOSFET, N-CH, 500V, 8.7A, TO-220FP; Transistor Polarity:N Channel; Continuous Dr
STMicroelectronicsSTP9NK50ZFP
STP9NK50ZFP N-CHANNEL MOSFET TRANSISTOR, 7.2 A, 500 V, 3-PIN TO-220FP
Descrizioni
Descrizioni di onsemi FDPF8N50NZ fornite dai suoi distributori.
N-Channel Power MOSFET, UniFETTM II, 500 V, 8 A, 850 mΩ, TO-220F
Single N-Channel 500 V 130 W 18 nC DMOS Through Hole Mosfet - TO-220F-3
Unifet2 500V N-Channel Mosfet, To220F Single Gauge Rohs Compliant: Yes
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N CH MOSFET, UNITFET, 500V, 8A, TO-220F;; N CH MOSFET, UNITFET, 500V, 8A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:500V; On Resistance Rds(on):770mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance850 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time27 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance735 pF
Max Operating Temperature150 °C
Max Power Dissipation40.3 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation40.3 W
Rds On Max850 mΩ
Rise Time34 ns
Schedule B8541290080
Turn-Off Delay Time43 ns
Turn-On Delay Time17 ns
Dimensions
Height15.87 mm
Length10.16 mm
Width4.7 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità