Infineon FZ1600R17HP4B2BOSA2

Insulated Gate Bipolar Transistor, 1600A I(C), 1700V V(BR)CES, N-Channel
$ 932.398
Production
Pagina del produttoreScheda dati

Prezzo e stock

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DistributorSKUMinPkg
DigiKey448-FZ1600R17HP4B2BOSA2-ND131Tray
NewarkFZ1600R17HP4B2BOSA201
AvnetFZ1600R17HP4B2BOSA202
1d
Arrow ElectronicsFZ1600R17HP4B2BOSA202
FarnellFZ1600R17HP4B2BOSA201
22h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon FZ1600R17HP4B2BOSA2.

Infineon

Datasheet1 pagina12 anni fa

IHS

_legacy Avnet

iiiC

Farnell

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Parti alternative

Questo componente
Parti alternative
InfineonFZ1600R17HP4B2BOSA2
InfineonFZ1600R17HP4HOSA2
InfineonFZ1600R17HP4HOSA2
Price @ 1000
$ 932.398
$ 669.87
$ 669.87
Stock
450,661
254,261
254,261
Authorized Distributors
5
5
5
Mount
Screw
Screw
Screw
Case/Package
Module
Module
Module
Collector Emitter Breakdown Voltage
1.7 kV
-
-
Max Collector Current
1.6 kA
1.6 kA
1.6 kA
Power Dissipation
10.5 kW
-
-
Collector Emitter Saturation Voltage
2.25 V
2.25 V
2.25 V
Reverse Recovery Time
-
-
-

Supply Chain

Country of OriginHungary
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-06-23
Lifecycle StatusProduction (Last Updated: 3 weeks ago)

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Descrizioni

Descrizioni di Infineon FZ1600R17HP4B2BOSA2 fornite dai suoi distributori.

Insulated Gate Bipolar Transistor, 1600A I(C), 1700V V(BR)CES, N-Channel
IHS
Trans IGBT Module N-CH 1.7KV 1600A 7-pin IHMB130-1
EBV Elektronik
IGBT MOD 1700V 1600A A-IHV130-3
DigiKey
DIODE ARRAY SCHOTTKY 100V D2PAK
YIC International
2.25V@ 15V,1.6kA 1.6KA IHV-130A-3
UnikeyIC
1700V IHMB 130mm single switch IGBT Module with soft-switching Trench-IGBT4, AlSiC base-plate and enlarged diode - The best solution for your traction and industry applications. | Summary of Features: Extended Operation Temperature T(vj op); Enlarged Diode for regenerative operation; Low V(CEsat); 4kV AC 1min Insulation; AlSiC Base Plate for increasing Thermal Cycling Capability; Package with CTI > 400; High Creepage and Clearance Distances; High Power and Thermal Cycling Capability; UL recognised | Benefits: High Power Density; Standardized housing | Target Applications: drives; wind; traction; cav
Infineon
IGBT, ONE SWITCH, 1700V, 1600A; Module Configuration:Dual; Transistor Polarity:N Channel; DC Collector Current:1600A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:11kW; Collector Emitter Voltage V(br)ceo:1.7kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:11kW
element14 APAC

Immagini

iiiC
LZChips

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • FZ1600R17HP4-B2
  • FZ1600R17HP4B2
  • FZ1600R17HP4_B2
  • SP001029946