Infineon BSZ100N03MSGATMA1
$ 0.273
Production
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Distributori di stock non autorizzati
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | BSZ100N03MSGATMA1 | 5000 | 5K | Tape & Reel | ||||||||
| Rochester Electronics | BSZ100N03MSGATMA1 | 24.084 | 14h | |||||||||
| DigiKey | BSZ100N03MSGATMA1CT-ND | 19 | 1 | Cut Tape | ||||||||
| Newark | BSZ100N03MSGATMA1 | 0 | 1 | Cut Tape | ||||||||
| Avnet | BSZ100N03MSGATMA1 | 0 | 5K | 16h |
Cronologia dell'inventario
Tendenza a 3 mesi: -2.64%
Modelli CAD
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Modelli CAD
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| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta | ||
 SnapEDA | Impronta | 3D | Scarica |
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Supply Chain
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-10-30
Lifecycle StatusProduction (Last Updated: 1 week ago)
Parti correlate
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Single N-Channel 30 V 8.7 mOhm 12 nC HEXFET® Power Mosfet - PQFN-5 x 6 mm
InfineonIRFHM830TRPBF
Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
Descrizioni
Descrizioni di Infineon BSZ100N03MSGATMA1 fornite dai suoi distributori.
2.1W 16V 1V 8.3nC@ 4.5V,17nC@ 10V 1N 30V 9.1m¦¸@ 10V 40A 1.3nF@ 15V SON , 3.3mm*3.3mm*1.1mm
Trans MOSFET N-CH 30V 10A 8-Pin TSDSON EP T/R
10 A 30 V 0.0114 ohm N-CHANNEL Si POWER MOSFET
MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
Power Field-Effect Transistor, 10A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 30V 10A/40A 8TSDSON
BSZ100N03 - 12V-300V N-CHANNEL P
MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:30W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:30W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -2.64%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)10 A
Drain to Source Resistance11.4 mΩ
Drain to Source Voltage (Vdss)30 V
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.3 nF
Max Dual Supply Voltage30 V
Max Operating Temperature175 °C
Max Power Dissipation30 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance9.1 mΩ
Package Quantity5000
PackagingTape & Reel
Power Dissipation30 W
Rds On Max9.1 mΩ
Rise Time2.8 ns
Schedule B8541290080
Threshold Voltage2 V
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità