Infineon BSM75GAR120DN2

Trans IGBT Module N-CH 1.2kV 75A nom 625W
Obsolete
Pagina del produttoreScheda dati

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Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon BSM75GAR120DN2.

Farnell

Datasheet5 pagine0 anni fa
Datasheet6 pagine17 anni fa

element14 APAC

Elcodis

_legacy Avnet

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-02-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descrizioni

Descrizioni di Infineon BSM75GAR120DN2 fornite dai suoi distributori.

Trans IGBT Module N-CH 1.2kV 75A nom 625W
Avnet
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel
IHS
CONN HEADER SMD R/A 3POS 1.3MM
YIC International
IGBT MODULE, CHOPPER, 1200V; Transistor Polarity: N Channel; DC Collector Current: 105A; Collector Emitter Saturation Voltage Vce(on): 3V; Power Dissipation Pd: 625W; Collector Emitter V; Available until stocks are exhausted
Farnell
Igbt Module, Chopper, 1200V; Transistor, Polaridad:Canal N; Corriente De Colector Dc:105A; Tensión De Saturación Colector-Emisor Vce(On):3V; Disipación De Potencia Pd:625W; Tensión Colector Emisor V(Br)Ceo:1.2Kv; Núm. De Contactos:7 |Infineon BSM75GAR120DN2
Newark

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