Infineon BFS17PE6327HTSA1

BFS17P Series NPN 280 mW 15 V 25 mA SMT Silicon RF Transistor - SOT-23

NPN Silicon RF Transistor for broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA | Summary of Features: For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA; Pb-free (RoHS compliant) package | Target Applications: Wireless Communications; For amplifier and oscillator applications in RF Front-end

RF TRANSISTOR, NPN, SOT-23; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:15V; Power Dissipation Pd:280mW; DC Collector Current:25mA; DC Current Gain hFE:70; Operating Temperature Range:-65°C to +150°C; RF Transistor Case:SOT-23; No. of Pins:3; Continuous Collector Current Ic:25mA; Continuous Collector Current Ic Max:50mA; Current Ic Continuous a Max:50mA; Current Ic hFE:25mA; Forward Current Transfer Ratio:1:10; Gain Bandwidth ft Min:1GHz; Gain Bandwidth ft Typ:2.5GHz; Hfe Min:20; No. of Transistors:1; Noise Figure Typ:3.5dB; Output @ Third Order Intercept Point IP3:21.5dB; Package / Case:SOT-23; Power @ 1dB Gain Compression, P1dB:10dBm; Power Dissipation Ptot Max:280mW; SMD Marking:MC; Termination Type:SMD; Test Frequency:800MHz; Transistor Case Style:SOT-23; Voltage Vcbo:25V

TRANSISTOR, NPN RF SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 15V; Transition Frequency ft: 2.5GHz; Power Dissipation Pd: 280mW; DC Collector Current: 25mA; DC Current Gain hFE: 20hFE; RF Transistor

RF TRANSISTOR, NPN, SOT-23; Transistor Type:RF Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:15V; Continuous Collector Current Ic:25mA; ft, Typ:2.5GHz; Ratio, Forward Current Transfer:1:10; Case ;RoHS Compliant: Yes