Infineon BCV61CE6327HTSA1

BCV61 Series NPN 30 V 100 mA SMT Silicon Double Transistor - SOT-143-4
$ 0.36
EOL
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
Newark
2
BCV61CE6327HTSA179335Cut Tape
Rochester ElectronicsBCV61CE6327HTSA1764.560
18h
AvnetBCV61CE6327HTSA109K
20h
Future Electronics
2
BCV61CE6327HTSA103KTape & Reel
Arrow ElectronicsBCV61CE6327HTSA109K

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon BCV61CE6327HTSA1.

IHS

Datasheet7 pagine14 anni fa

Farnell

iiiC

Cronologia dell'inventario

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Parti alternative

Questo componente
Parti alternative
InfineonBCV61CE6327HTSA1
NexperiaBCV61C,215
Price @ 1000
$ 0.36
$ 0.348
Stock
3,046,150
1,462,901
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOT-143-4
TO-253-4
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
30 V
30 V
Max Collector Current
100 mA
100 mA
Transition Frequency
250 MHz
100 MHz
Collector Emitter Saturation Voltage
-
600 mV
hFE Min
420
110
Power Dissipation
300 mW
250 mW

Supply Chain

Country of OriginAustria, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1991-05-01
Lifecycle StatusEOL (Last Updated: 4 months ago)
LTB Date2015-10-15
LTD Date2016-10-15

Parti correlate

NexperiaBCV61C,215
Bipolar Transistor Array, Dual NPN, 30 V, 100 mA, 250 mW, 420 hFE, SOT-143B, 4 Pins
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RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, L Band, Silicon, NPN, TO-236AB
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NXP SemiconductorsBFU530R
Trans RF BJT NPN 16V 0.065A 450mW Automotive 4-Pin(3+Tab) SOT-143B T/R
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NXP SemiconductorsBFU520R
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, L Band, Silicon, NPN
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NXP SemiconductorsBFU520XAR
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, L Band, Silicon, NPN
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NXP SemiconductorsBFU530XAR
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN
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Descrizioni

Descrizioni di Infineon BCV61CE6327HTSA1 fornite dai suoi distributori.

BCV61 Series NPN 30 V 100 mA SMT Silicon Double Transistor - SOT-143-4
Future Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
IHS
Dual Transistor BJT NPN 30V 0.1A SOT143
RS APAC
Trans GP BJT NPN 30V 0.1A 4-Pin SOT-143 T/R
Avnet
; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:30V; Continuous Collector Current, Ic:100mA; Collector Emitter Saturation Voltage, Vce(sat):0.6V; Power Dissipation, Pd:300mW; DC Current Gain Min (hfe):110 ;RoHS Compliant: Yes
Newark
NPN Silicon Double Transistor | Summary of Features: To be used as a current mirror; Good thermal coupling and VBE matching; High current gain; Low collector-emitter saturation voltage; Pb-free (RoHS compliant) package; Qualified according AEC Q102 | Target Applications: For current mirror applications
Infineon
Transistor Polarity = NPN / Channels = 2 / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 30 / DC Current Gain (hFE) = 520 / Collector-Base Voltage (Vcbo) V = 30 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 250 / Power Dissipation (Pd) mW = 300 / Package Type = SOT-143 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Length mm = 2.9 / Width mm = 1.3 / Height mm = 1 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 200 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900
Distrelec
TRANSISTOR, DUAL, NPN, SOT-143; Module Configuration:Dual; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:520; Transistor Case Style:SOT-143; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:600mV; Continuous Collector Current Ic Max:100mA; Current Ic @ Vce Sat:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; External Depth:2.6mm; External Length / Height:1mm; External Width:2.9mm; Gain Bandwidth ft Typ:250MHz; Hfe Min:110; No. of Transistors:2; Package / Case:SOT-143; Pin Configuration:a; Power Dissipation Pd:300mW; Power Dissipation Ptot Max:300mW; SMD Marking:1Ls; Termination Type:SMD; Voltage Vcbo:30V
element14 APAC

Immagini

Infineon
Augswan
RS
Distrelec
Newark
Future Electronics
TME
LZChips
iiiC

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • BCV 61C
  • BCV 61C E6327
  • BCV-61C-E6327
  • BCV61C
  • BCV61C E6327
  • BCV61C-E6327
  • BCV61C.
  • BCV61CE-6327
  • BCV61CE6327
  • SP000010887