Infineon AUIRFR6215
$ 3.02
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | AUIRFR6215 | 0 | 2 | Bulk | 1d | |||||||
| Farnell | AUIRFR6215 | 0 | 1 | 7h | ||||||||
| Microchip USA | AUIRFR6215 | 356 | 150 | Tray | 1d | |||||||
| Win Source | WS-AUIRFR6215 | 6000 | 15 | 8h | ||||||||
| Worldway Electronics | AUIRFR6215 | 14.025 | 7 | Tube | 1d |
Modelli CAD
Scarica il simbolo Infineon AUIRFR6215, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta | ||
 SnapEDA | Impronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-01-28
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2022-09-30
LTD Date2023-03-31
Parti correlate
InfineonIRFR6215PBF
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.295Ohm;ID -13A;D-Pak (TO-252AA);PD 110W
InfineonIRFR6215TRPBF
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.295Ohm;ID -13A;D-Pak (TO-252AA);PD 110W
InfineonIRFR6215TRLPBF
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.295Ohm;ID -13A;D-Pak (TO-252AA);PD 110W
Descrizioni
Descrizioni di Infineon AUIRFR6215 fornite dai suoi distributori.
Automotive Q101 -150V Single P-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
Infineon SCT
Single P-Channel 150 V 295 mOhm 66 nC Automotive HEXFET® Power Mosfet - TO-252-3
Trans MOSFET P-CH 150V 13A Automotive 3-Pin(2+Tab) DPAK Tube
Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
MOSFET,P CH,SCH DIODE,150V,13A,DPAK; Transistor Polarity:P Channel; Drain Source Voltage Vds:-150V; On Resistance Rds(on):0.295ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:-13A; Power Dissipation Pd:110W; Voltage Vgs Max:-20V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage-150 V
Drain to Source Resistance295 mΩ
Drain to Source Voltage (Vdss)-150 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance860 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance580 mΩ
Package Quantity3000
Power Dissipation110 W
Rds On Max295 mΩ
Rise Time36 ns
Schedule B8541290080
Turn-Off Delay Time53 ns
Turn-On Delay Time14 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità