Infineon AUIRFB3207

Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package
$ 1.45
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
Rochester ElectronicsAUIRFB320750
2h
RS (Formerly Allied Electronics)AUIRFB320705Bulk
19h
FarnellAUIRFB320701
2h
Microchip USAAUIRFB3207287150Tray
19h
Win SourceWS-AUIRFB32072070
4h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon AUIRFB3207.

IHS

Datasheet11 pagine15 anni fa

Cronologia dell'inventario

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Parti alternative

Questo componente
Parti alternative
InfineonAUIRFB3207
InfineonIRFB3207PBF
Price @ 1000
$ 1.45
$ 1.349
Stock
52,764
950,720
Authorized Distributors
3
6
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220AB
Drain to Source Voltage (Vdss)
75 V
75 V
Continuous Drain Current (ID)
75 A
75 A
Threshold Voltage
2 V
4 V
Rds On Max
4.5 mΩ
4.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
300 W
300 W
Input Capacitance
7.6 nF
7.6 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-07-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-02-28
LTD Date2018-08-31

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Descrizioni

Descrizioni di Infineon AUIRFB3207 fornite dai suoi distributori.

Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package
International Rectifier
Trans MOSFET N-CH 75V 170A Automotive 3-Pin(3+Tab) TO-220AB Tube
Verical
HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ComSIT Distribution GmbH
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
Infineon
MOSFET,N CH,75V,75A,TO220AB; Continuous Drain Current Id:170A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0036ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:300W; Voltage Vgs Max:20V
element14 APAC

Immagini

Infineon
RS
TME
International Rectifier
Rochester Electronics

Alias del produttore

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  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFAUIRFB3207
  • SP001519144