Infineon AUIRF1404ZS
$ 1.18
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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1 parte disponibile
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 1.18
$ 2.865
$ 2.865
Stock
157,807
621,878
621,878
Authorized Distributors
3
5
5
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
40 V
40 V
40 V
Continuous Drain Current (ID)
160 A
160 A
160 A
Threshold Voltage
2 V
-
-
Rds On Max
3.7 mΩ
3.7 mΩ
3.7 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
200 W
200 W
200 W
Input Capacitance
4.34 nF
4.34 nF
4.34 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-02-19
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2021-08-15
LTD Date2022-02-15
Parti correlate
InfineonAUIRL1404ZS
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
InfineonAUIRL1404ZSTRL
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
STMicroelectronicsSTH175N4F6-2AG
Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Descrizioni
Descrizioni di Infineon AUIRF1404ZS fornite dai suoi distributori.
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 40V 180A 3-Pin(2+Tab) D2PAK Tube
AUTOMOTIVE MOSFET 40V, 190A, 3.7 MOHM, 100 NC QG, D2PAK
HEXFET POWER MOSFET Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 40V, 160A, D2PAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; On Resistance Rds(on):2.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:180A; Power Dissipation Pd:200W; Voltage Vgs Max:20V
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Brushless Motor Drive
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)160 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance3.7 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time58 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.34 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance3.7 mΩ
Package Quantity1000
Power Dissipation200 W
Rds On Max3.7 mΩ
Rise Time110 ns
Threshold Voltage2 V
Turn-Off Delay Time36 ns
Turn-On Delay Time18 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità