onsemi IRFW630BTM_FP001
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Schede tecniche e documenti
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Descrizioni
Descrizioni di onsemi IRFW630BTM_FP001 fornite dai suoi distributori.
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK T/R
Discrete MOSFET, TO-263 2L (D2PAK), 6400-TAPE REEL
N-CH/200V/9A/0.4OHM/Substitute of IRFW630ATM
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
200V N-Channel B-FET / Substitute of IRFW630A
FAIRCHILD ,IRFW630BTM_FP001 <NV
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:9A; On Resistance, Rds(on):0.4ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-263 ;RoHS Compliant: Yes
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance400 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time65 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance720 pF
Max Operating Temperature150 °C
Max Power Dissipation72 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.13 W
Rds On Max400 mΩ
Rise Time70 ns
Turn-Off Delay Time60 ns
Turn-On Delay Time11 ns
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi IRFW630BTM_FP001.
Conformità
Classificazione ambientale
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità