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Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Microchip USA | FQP3N80 | 204 | 3500 | Tray | 2d | |||||||
| Win Source | WS-FQP3N80 | 11.200 | 85 | 8h | ||||||||
| Worldway Electronics | FQP3N80 | 8563 | 7 | Tube | 1d | |||||||
| Best Source | FQP3N80 | 28.449 | 16h | |||||||||
| Fly-Wing Technology | FQP3N80 | 2762 | 2d |
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQP3N80.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.741
Stock
75,828
468,902
Authorized Distributors
0
5
Mount
Through Hole
Through Hole
Case/Package
TO-220
TO-220AB
Drain to Source Voltage (Vdss)
800 V
800 V
Continuous Drain Current (ID)
3 A
3 A
Threshold Voltage
-
5 V
Rds On Max
5 Ω
4.8 Ω
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
107 W
107 W
Input Capacitance
690 pF
705 pF
Descrizioni
Descrizioni di onsemi FQP3N80 fornite dai suoi distributori.
800V N-Channel MOSFET | MOSFET N-CH 800V 3A TO-220
Power Field-Effect Transistor, 3A I(D), 800V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFETs 800V N-Channel QFET
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)3 A
Current Rating3 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance5 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance690 pF
Max Operating Temperature150 °C
Max Power Dissipation107 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation107 W
Rds On Max5 Ω
Rise Time40 ns
Turn-Off Delay Time30 ns
Voltage Rating (DC)800 V
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQP3N80.