onsemi FDP8876
$ 0.329
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-01-05
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Descrizioni
Descrizioni di onsemi FDP8876 fornite dai suoi distributori.
Trans MOSFET N-CH 30V 70A 3-Pin(3+Tab) TO-220AB Tube
RAIL / 30V,71A,8.5 OHMS,NCH,TO220,POWER TRENCH MOSFET
Power Field-Effect Transistor, 64A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-220AB
30V N-Channel PowerTrench® MOSFET
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)64 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance10.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time39 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.7 nF
Max Operating Temperature175 °C
Max Power Dissipation70 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation70 W
Rds On Max8.7 mΩ
Rise Time97 ns
Turn-Off Delay Time51 ns
Turn-On Delay Time9 ns
Conformità
Classificazione ambientale
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità