Diodes Inc. ZXMN10A09KTC
$ 0.959
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | ZXMN10A09KTC | 1767 | 1 | Cut Tape | ||||||||
| Arrow Electronics | ZXMN10A09KTC | 2500 | 2500 | |||||||||
| Verical | ZXMN10A09KTC | 2500 | 2500 | |||||||||
| DigiKey | ZXMN10A09KCT-ND | 813 | 1 | Cut Tape | ||||||||
| TME | ZXMN10A09KTC | 0 | 1 | 10h |
Cronologia dell'inventario
Tendenza a 3 mesi: -0.13%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-02-17
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
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Single P-Channel 100 V 300 mOhm 8.4 nC 42 W Silicon SMT Mosfet - TO-252-3
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MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak (TO-252AA);PD 48W
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MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak (TO-252AA);PD 48W
Diodes Inc.ZXMP10A18KTC
Trans MOSFET P-CH 100V 3.8A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 100V 3.8A DPAK
onsemiSFT1443-TL-W
Power Field-Effect Transistor, 9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Descrizioni
Descrizioni di Diodes Inc. ZXMN10A09KTC fornite dai suoi distributori.
Mosfet, N-Ch, 100V, 5A, To-252 Rohs Compliant: Yes |Diodes Inc. ZXMN10A09KTC
MOSFET N-CH 100V 5A DPAK / Trans MOSFET N-CH 100V 5A 3-Pin(2+Tab) DPAK T/R
N-Channel 100 V 0.085 Ohm Enhancement Mode MOSFET -DPAK
2.15W(Ta) 20V 4V@ 250¦ÌA 26nC@ 10 V 1N 100V 85m¦¸@ 4.6A,10V 5A 1.313nF@50V TO-252-3 2.52mm
Power Field-Effect Transistor, 5A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Alias del produttore
Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Cronologia dell'inventario
Tendenza a 3 mesi: -0.13%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)5 A
Current Rating7.7 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance85 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time12.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.313 nF
Max Operating Temperature150 °C
Max Power Dissipation4.3 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Rds On Max85 mΩ
Resistance85 mΩ
Rise Time5.3 ns
Turn-Off Delay Time27.5 ns
Turn-On Delay Time6.8 ns
Voltage Rating (DC)100 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità